Transistor, integrierte Schaltung und Verfahren zur Herstellung einer integrierten Schaltung

The transistor (20) has a gate electrode (23), which is arranged in a gate trench (27) that is formed in a semiconductor substrate (1), and a conductive carbon material (25) that corresponds to a layer over a gate dielectric layer. A gate electrode includes a conductive filling. The carbon material...

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Bibliographic Details
Main Authors SCHOLZ, ARND, GRAHAM, ANDREW, HARTWICH, JESSICA
Format Patent
LanguageGerman
Published 05.02.2009
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The transistor (20) has a gate electrode (23), which is arranged in a gate trench (27) that is formed in a semiconductor substrate (1), and a conductive carbon material (25) that corresponds to a layer over a gate dielectric layer. A gate electrode includes a conductive filling. The carbon material partially fills the gate trench. An upper side of the carbon material is arranged underneath a main surface (10) of the substrate. An isolating layer (26) is arranged over the surface of the carbon material. An independent claim is also included for a method for manufacturing an integrated circuit.
Bibliography:Application Number: DE20071032290