Environmental light sensor for monitoring intensity of interior light in closed areas, has light sensor comprises of photodiode, which is made of organic semiconductor material and photodiodes are formed in given geometry of large area

The environmental light sensor has a photodetector (6). The photodetector comprises of a photodiode (2i), based on organic semiconductor materials. The photodiodes are formed in given geometry of a large area and are directed towards different ranges of the area. The photodetector has multiple plana...

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Bibliographic Details
Main Author FUERST, JENS
Format Patent
LanguageEnglish
German
Published 14.08.2008
Subjects
BASIC ELECTRIC ELEMENTS
COLORIMETRY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT,POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED,VISIBLE OR ULTRA-VIOLET LIGHT
MEASURING
PHYSICS
RADIATION PYROMETRY
SEMICONDUCTOR DEVICES
TESTING
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Summary:The environmental light sensor has a photodetector (6). The photodetector comprises of a photodiode (2i), based on organic semiconductor materials. The photodiodes are formed in given geometry of a large area and are directed towards different ranges of the area. The photodetector has multiple planar photodiode, which is made of a flexible substrate. An organic layer is provided, which is made of a hole-transporting polythiophene and an electron-transporting fullerene derivative. Zur Verwendung als Umgebungslichtsensoren sind Photodetektoren auf Halbleiterbasis bekannt. Solche Photodetektoren mit Siliziumeinkristallen benötigen insbesondere ein Gehäuse und eine zugehörige Optik. Gemäß der Erfindung hat der Sensor (6, 10) eine vorgegebene Anzahl von Photodioden (2i, 12i) auf der Basis von organischen Halbleitermaterialien, wobei die organischen Photodioden (2i, 12i) großflächig in vorgegebener Geometrie ausgebildet sind und auf unterschiedliche Bereiche eines Raumes richtbar sind.
Bibliography:Application Number: DE20071015471