Silicon-based solar cell comprises front-end contacts that are placed on a front-end doped surface layer and a passivation layer with backside contacts that is placed on the backside doped layer

• Main Authors: KAMBOR, STEPHAN, HOFMANN, MARC
• Format: Patent
• Language: English; German
• Published: 03.04.2008
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGYGENERATION, TRANSMISSION OR DISTRIBUTION; SEMICONDUCTOR DEVICES; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS; TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE

Silicon-based solar cell comprises front-end (FE) contacts that are placed on a front-end doped surface layer and at least a passivation layer with backside (BS) contacts that is placed on the backside doped layer, where the backside passivation layer is composed of at least one silicon oxide layer that is placed on the backside doped layer, at least a silicon nitride layer that is deposited on the silicon oxide layer and at least an additional superimposed silicon oxide layer. An independent claim is included for preparing the silicon-based solar cell comprising applying the backside passivation layers on the silicon wafer by chemical or physical vapor deposition process. strukturierter Rückseitenpassivierungsschicht sowie Verfahren zu deren Herstellung. Die Rückseitenpassivierungsschicht ist dabei auf der innen liegenden, der Rückseite der Solarzelle zugewandten, dotierten Schicht der Solarzelle aufgebracht und besteht aus alternierenden Schichten aus SiNx sowie SiOx. Die Schichtstruktur der Rückseitenpassivierungsschicht kann über einen CVD-Prozess hergestellt werden.