Ionenimplantationsvorrichtung und Verfahren zum Implantieren von Ionen durch Verwendung derselben

A X/Y scanner (22) deflects transmitted ion beam focussed by a quadrupole magnet assembly (21), in both horizontal and vertical directions. A quadrupole magnet assembly (23) converges and diverges the ion beam deflected by scanner in both directions. A beam parallelizer (24) rotates the ion beam in...

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Bibliographic Details
Main Authors ROUH, KYOUNG-BONG, JIN, SEUNG-WOO, LEE, MIN-YONG
Format Patent
LanguageGerman
Published 16.09.2010
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A X/Y scanner (22) deflects transmitted ion beam focussed by a quadrupole magnet assembly (21), in both horizontal and vertical directions. A quadrupole magnet assembly (23) converges and diverges the ion beam deflected by scanner in both directions. A beam parallelizer (24) rotates the ion beam in synchronization with the magnet assembly (23), to implant ions into a wafer (25). An independent claim is also included for ions implantation method.
Bibliography:Application Number: DE20041063643