Production of a lens made from a gallium phosphide-based semiconductor material comprises preparing a substrate from the semiconductor material, applying a photolacquer on the substrate, structuring the layer and etching the photolacquer

• Main Authors: ZULL, HERIBERT, DACHS, JUERGEN, WEISS, GUIDO
• Format: Patent
• Language: English; German
• Published: 03.04.2003
• Edition: 7
• Subjects: APPARATUS SPECIALLY ADAPTED THEREFOR; BASIC ELECTRIC ELEMENTS; CINEMATOGRAPHY; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; ELECTROGRAPHY; HOLOGRAPHY; MATERIALS THEREFOR; OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS; OPTICS; ORIGINALS THEREFOR; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS; SEMICONDUCTOR DEVICES

Production of a lens made from a gallium phosphide (GaP) based semiconductor material comprises: (a) preparing a substrate made from a GaP-based semiconductor material; (b) applying a photolacquer on the substrate; structuring the layer and rounding into a lacquer lens by heating; and (c) etching the photolacquer and the substrate in a plasma etching process. Preferably the substrate is etched against the photolacquer layer with a selectivity of 0.5-4. The flow of process gases introduced during the plasma etching is adjusted so that the selectivity of the etching of the semiconductor layer/photolacquer remains constant. During plasma etching, Cl2 or SiCl4, a noble gas, a fluorine compound and a hydrogen compound are introduced. Bei einem Verfahren zum Herstellen einer Linse aus GaP-basiertem Halbleitermaterial, wird DOLLAR A - ein Substrat aus GaP-basiertem Halbleitermaterial bereitgestellt, DOLLAR A - eine Photolackschicht auf das Substrat aufgebracht, DOLLAR A - die Photolackschicht strukturiert und durch Ausheizen zu einer Lacklinse verrundet und DOLLAR A - die verrundete Photolackschicht und das Halbleitersubstrat gemeinsam in einem Plasmaätzprozeß geätzt.