Process for compensating for etching stress during etching of a semiconductor wafer comprises exposing a substrate bead from the edge of the wafer forming a pattern using photolacquer

• Main Authors: TSAI, NIEN-YU, LEE, RAY C, LIN, MING-HUNG, WANG, YUNGING
• Format: Patent
• Language: English; German
• Published: 25.04.2002
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

Process for compensating for etching stress during etching of a semiconductor wafer comprises exposing a substrate bead from the edge of the wafer forming a pattern using photolacquer. Preferred Features: The bead of silicon is removed from the whole periphery of the wafer. The bead has a width of 1...