Making bipolar element e.g. transistor operating in high gigahertz region, involves forming base layer, masking layer and second base semiconductor layer carrying ohmic electrode in metallic material

• Main Authors: RYUM, BYUNG RYUL, CHO, DEOK HO, HAN, TAE HYEON, LEE, SOO MIN
• Format: Patent
• Language: English; German
• Published: 29.03.2001
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

Bipolar device is manufactured by forming base layer with an active base layer and a first base semiconductor electrode layer, from a semiconductor material of second type, on collector, forming a masking layer on active base layer, forming a second base semiconductor layer on first base semiconduct...