Semiconductor device

The utility model provides a semiconductor device which is provided with an upper metallized layer and a lower metallized layer electrically connected to the upper metallized layer. The utility model has the fabricating method that a thin stopping layer is formed on the lower metallized layer, where...

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Bibliographic Details
Main Authors TIANYI BAO, XUNMING ZHANG
Format Patent
LanguageEnglish
Published 05.07.2006
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The utility model provides a semiconductor device which is provided with an upper metallized layer and a lower metallized layer electrically connected to the upper metallized layer. The utility model has the fabricating method that a thin stopping layer is formed on the lower metallized layer, wherein the thickness of the thin stopping layer is less than 300 angstroms, and the thickness of 100 angstroms is preferable; the etching process and the ashing processing for removing photoresist and the etching of the partial intermediate which etches the stopping layer don't harm the lower metallied layer.
Bibliography:Application Number: CN20042112319U