Light emitting diode and light emitting device

• Main Authors: JING QI, CAI JIMING, TU RUQIN, ZHANG ZHONGYING, LI YAN, ZHU XIUSHAN, LI JUNXIAN, BAO ZHIHAO, YANG QINGCHAO
• Format: Patent
• Language: Chinese; English
• Published: 20.08.2024
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The utility model discloses a light-emitting diode and a light-emitting device, and relates to the technical field of semiconductor manufacturing. In the light emitting diode, an epitaxial structure comprises a first semiconductor layer, an active layer and a second semiconductor layer which are stacked in sequence; the first insulating layer is arranged on the epitaxial structure and is provided with a first opening for exposing the first semiconductor layer, and the first opening is positioned on the outer side of the outer periphery of the upper surface of the second semiconductor layer; the reflecting electrode layer is arranged on the first insulating layer; the outer periphery of the lower surface of the reflection electrode layer comprises a first edge section extending around the first opening and a second edge section except the first edge section. The outer periphery of the upper surface of the second semiconductor layer comprises a third edge section extending around the first opening and a fourth