Gallium nitride device structure with multiple active regions

• Main Authors: ZHU RENQIANG, LUO PENG, QIN YAO, LIU YONG, LIU JIACAI
• Format: Patent
• Language: Chinese; English
• Published: 31.05.2024
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The utility model discloses a gallium nitride device structure with multiple active regions, and relates to the technical field of semiconductor power, the gallium nitride device structure comprises multiple active regions, each active region comprises multiple gallium nitride device units, and the multiple gallium nitride device units are arranged in parallel along the gate-drain spacing direction; the plurality of active regions are longitudinally arranged between the drain electrode pad and the grid electrode pad along the extending direction of the drain electrode pad towards the grid electrode pad; the device further comprises a grid electrode interconnection metal layer, a source electrode interconnection metal layer and a drain electrode interconnection metal layer. The grid interconnection metal layer enables the grids of all the gallium nitride device units to be connected in parallel with the grid pad; the source electrode interconnection metal layer enables the source electrodes of all gallium nitr