Insulated gate bipolar transistor (IGBT) heat dissipation bottom plate, heat dissipation element and heat dissipation device

• Main Authors: ZHU LIANG, HE YAO, LU SHAOZHOU, DONG CHUNTAO, YE LUOSHENG, CHENG JUN
• Format: Patent
• Language: Chinese; English
• Published: 24.05.2024
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The utility model discloses an IGBT heat dissipation base plate, and discloses an IGBT heat dissipation element and an IGBT heat dissipation device with the IGBT heat dissipation base plate, the IGBT heat dissipation base plate comprises a heat dissipation substrate and a plurality of heat dissipation groups, the plurality of heat dissipation groups are arranged on the end face of one end of the heat dissipation substrate at intervals, each heat dissipation group comprises two heat dissipation columns with complementary shapes, and the heat dissipation columns are arranged on the heat dissipation base plate. And the two heat dissipation columns are distributed at intervals and are oppositely arranged. In the same area of the heat dissipation substrate, the number of the heat dissipation columns which are relatively arranged at intervals is increased, so that the heat dissipation area of the heat dissipation columns in contact with cooling liquid is increased, and the heat dissipation effect of the IGBT heat d