Nitride semiconductor transistor and electronic equipment

• Main Authors: CHEN ZHIBIN, JIANG QIMENG
• Format: Patent
• Language: Chinese; English
• Published: 16.05.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The utility model provides a nitride semiconductor transistor and an electronic device. The nitride semiconductor transistor comprises a substrate structure, a nitride epitaxial structure and a functional electrode layer, the substrate structure comprises a heavily-doped P-type substrate and a lightly-doped P-type epitaxial layer which are arranged in a stacked mode, and one side, away from the heavily-doped P-type substrate, of the lightly-doped P-type epitaxial layer extends towards the heavily-doped P-type substrate to form an N-type region; the nitride epitaxial structure comprises a nitride buffer layer, a barrier layer and a P-type nitride layer which are sequentially formed on the lightly doped P-type epitaxial layer; the functional electrode layer comprises a source electrode, a drain electrode, a grid electrode and an isolation layer; a first isolation part corresponds to the N-type region and penetrates through the barrier layer and the nitride buffer layer to be in contact with the lightly doped P-