Device for preparing large-size semiconductor crystal without crucible

• Main Authors: ZHAO HONGFEI, GU WEIXIA, SHI YANLEI, LI XIAOLAN, WANG SHUJIE, WANG YANG, JIANG JIAN, SUN NIEFENG, SHAO HUIMIN, XU SENFENG, LI YAQI
• Format: Patent
• Language: Chinese; English
• Published: 31.01.2023
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMISTRY; CRYSTAL GROWTH; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

The utility model discloses a crucible-free device for preparing large-size semiconductor crystals, and belongs to the field of preparation of semiconductor materials. The device comprises a furnace body shell forming a sealed furnace body, a vacuum pipeline penetrating through the furnace body shell, a water cooling pipeline penetrating through the furnace body shell, a crystal support arranged at the lower end in the furnace body, a polycrystalline clamp arranged at the upper end in the furnace body, an infrared thermometer arranged on the furnace body shell, and a lower resistance heater and an upper resistance heater which are arranged in the furnace body, an alternating magnetic field generator, an electromagnetic constraint device and an auxiliary heater. When the device provided by the utility model is used for growing the crystal, a crucible is not needed, a growth interface is stable and is not influenced by the size of the semiconductor crystal, and the device is also suitable for preparing the crys