Image sensor and photoetching mask

• Main Authors: HENG JIAWEI, HOU JINJIAN, MO YAOWU, XU CHEN, CHEN PENG, REN GUANJING
• Format: Patent
• Language: Chinese; English
• Published: 25.11.2022
• Subjects: APPARATUS SPECIALLY ADAPTED THEREFOR; BASIC ELECTRIC ELEMENTS; CINEMATOGRAPHY; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; ELECTROGRAPHY; HOLOGRAPHY; MATERIALS THEREFOR; ORIGINALS THEREFOR; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS; SEMICONDUCTOR DEVICES

The utility model provides an image sensor and a photoetching mask, the image sensor comprises a first chip area, the first chip area at least comprises a first sub-chip area and a second sub-chip area, the first sub-chip area and the second sub-chip area are arranged along a first preset direction, and the second sub-chip area is different from the first sub-chip area; the first chip area is arranged along a first preset direction, the second chip area is arranged along a second preset direction relative to the first chip area, an included angle is formed between the first preset direction and the second preset direction, and the first chip area and the second chip area are identical in circuit arrangement. According to the utility model, the area array image sensor chip area is arranged, and the pattern of the chip area is formed through at least one translation and at least two corresponding exposure, so that the pattern can be spliced during exposure, and the chip can be made longer and is not limited by