Donor substrate and transfer apparatus

• Main Authors: HUANG BAIYUAN, PENG XINHAN, CHEN QIUXING, WANG GUOAN
• Format: Patent
• Language: Chinese; English
• Published: 14.10.2022
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The donor substrate comprises a base layer, an absorption layer and a transfer layer which are connected in sequence, the surface, opposite to the absorption layer, of the transfer layer is provided with separation grooves so that a plurality of transfer parts can be separated, laser can penetrate through the base layer, and the absorption layer can absorb the laser so that the transfer parts can be driven to be separated. Due to the fact that the transfer parts are separated through the separation grooves, viscosity between the transfer parts and other adjacent transfer parts can be reduced or eliminated when the transfer parts are separated, it is guaranteed that the amount of materials transferred every time is roughly consistent, and therefore the problem of uneven transfer is solved, and meanwhile generation of chippings can be reduced, and the problem of chipping splashing is solved. Besides, the transfer part is formed on the transfer layer, the absorption layer or the base layer does not need to be ch