P-type SiC LDMOS power device

• Main Authors: HE JIA, ZHANG YUJIE, ZHANG CHANGSHA
• Format: Patent
• Language: Chinese; English
• Published: 23.09.2022
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The utility model provides a P-type silicon carbide laterally diffused metal oxide semiconductor (SiCLDMOS) power device, which comprises an epitaxial layer connected to the upper side surface of a silicon carbide substrate, and a source region ohmic contact region arranged on the epitaxial layer; the bottom of the isolation region is connected to the upper side surface of the silicon carbide substrate, one side surface of the isolation region is connected to the epitaxial layer, and the isolation region is provided with a drain ohmic contact region; the bottom and one side surface of the pressure-bearing region are connected to the epitaxial layer, and the other side surface of the pressure-bearing region is connected to the isolation region; the drain electrode metal layer is connected to the drain electrode ohmic contact region; the source electrode metal layer is connected to the source region ohmic contact region; the gate metal layer is connected to the epitaxial layer; insulating layers are arranged am