Double-MOSFET high-reliability lead frame

• Main Authors: XI YUPAN, PAN TINGHONG, YUAN WEI, CHI XIAOPENG, ZENG CHENLONG
• Format: Patent
• Language: Chinese; English
• Published: 12.07.2022
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The utility model discloses a double-MOSFET high-reliability lead frame, and relates to the technical field of chips. The high-reliability lead frame with the double MOSFETs comprises a substrate A and a substrate B. The substrate A and the substrate B are provided with an MOSFET chip A and an MOSFET chip B respectively, and the substrate A and the substrate B are provided with a metal-oxide-semiconductor field effect transistor (MOSFET) chip A and a metal-oxide-semiconductor field effect transistor (MOSFET) chip B respectively. The lower left side of the substrate A is connected with a Pin1 pin through a bonding wire, and the lower left side of the substrate B is connected with a Pin3 pin through a bonding wire; the included angle between the left side of the MOSFET chip A and the bottom of the substrate A is 60 degrees, and the included angle between the left side of the MOSFET chip B and the bottom of the substrate B is 60 degrees. According to the lead frame, an SOP8L double-base-island lead frame is rese