Light-emitting diode chip, light-emitting module and light-emitting or display device
The utility model provides a light emitting diode chip which at least comprises an epitaxial structure, a current blocking layer and a current expansion layer. The epitaxial structure includes a first conductive type semiconductor layer, a light emitting layer, and a second conductive type semicondu...
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Main Authors | , , , , , , |
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Format | Patent |
Language | Chinese English |
Published |
05.04.2022
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Subjects | |
Online Access | Get full text |
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Summary: | The utility model provides a light emitting diode chip which at least comprises an epitaxial structure, a current blocking layer and a current expansion layer. The epitaxial structure includes a first conductive type semiconductor layer, a light emitting layer, and a second conductive type semiconductor layer stacked in sequence. The current blocking layer is formed on the second conductive type semiconductor layer. And the current expansion layer at least comprises a first sub-current expansion layer and a second sub-current expansion layer which are stacked on the current blocking layer in sequence. The first sub-current expansion layer is formed on the current blocking layer and at least covers the upper surface and the side wall area of the current blocking layer and a part of the upper surface of the second conductive type semiconductor layer. The second sub-current expansion layer is formed on the first sub-current expansion layer and at least covers the upper surface and the side wall area of the first |
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Bibliography: | Application Number: CN202122557197U |