Semiconductor device

• Main Authors: ER YUHUANG, LIN XINNAN, LI FANGHUA, YOU ZONGLONG, LIU MEIHUA, ITAGAKI KATSUNORI
• Format: Patent
• Language: Chinese; English
• Published: 05.06.2020
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

The utility model provides a semiconductor device. The semiconductor device comprises a growth cavity; the base is arranged in the growth cavity, and a substrate is allowed to be arranged on the base;the target material is arranged in the growth cavity; the magnets are arranged at opposite positions of the target material; and the multiple layers of reflecting plates are arranged on the inner wall of the growth cavity. The semiconductor equipment provided by the utility model is simple in structure, reasonable in design, long in service life and capable of improving the coating uniformity. 本实用新型提出一种半导体设备，包括：生长腔体；基座，设置在所述生长腔体内，所述基座允许设置基板；靶材，设置在所述生长腔体内；磁体，设置在所述靶材的相对的位置上；多层反射板，设置在所述生长腔体的内壁上。本实用新型提出的半导体设备结构简单，设计合理，使用寿命时间长，可提高镀膜的均匀性。