A process chamber and electrostatic chuck for processing substrate

• Main Authors: DANA LOVELL, JONATHAN SIMMONS
• Format: Patent
• Language: Chinese; English
• Published: 10.04.2020
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The present disclosure relates generally to a process chamber and an electrostatic chuck for processing a substrate. The electrostatic chuck includes: a facility plate; and an insulator provided between the cooling base and the ground plate. A support body is coupled to the cooling base for supporting a substrate on the support body. A ring is configured to surround the insulator. The ring is formed of a material that is resistant to degradation due to exposure to a manufacturing process. The ring optionally includes an extension configured to surround the facility panel. 本公开内容整体涉及一种用于处理基板的工艺腔室和静电吸盘。所述静电吸盘包括：设施板；以及绝缘体，所述绝缘体设置在冷却基部与接地板之间。支撑主体耦接到所述冷却基部以用于在所述支撑主体上支撑基板。环被配置为环绕所述绝缘体。所述环由耐受因暴露于制造工艺中造成的降解的材料形成。所述环任选地包括延伸部，所述延伸部被配置为环绕所述设施板。