Power module assembly, power semiconductor module and vehicle

• Main Authors: ZENG QIULIAN, SHI CAIYUN, YANG SHENGSONG, REN SIHAN
• Format: Patent
• Language: Chinese; English
• Published: 14.05.2019
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The utility model relates to a power module assembly, a power semiconductor module and a vehicle. The power module assembly includes: an insulating layer; a first metal layer disposed on the insulating layer; wherein the first IGBT chip set is formed by connecting a plurality of IGBT chips in parallel, the first IGBT chip set comprises a plurality of first IGBT chip units, and each first IGBT chipunit comprises one or more IGBT chips; wherein the first FRD chipset is formed by connecting a plurality of FRD chips in parallel; the first FRD chipset comprises a plurality of first FRD chip units.wherein each first FRD chip unit comprises one or more FRD chips, the first IGBT chipset and the first FRD chipset are reversely connected in parallel, and the plurality of first IGBT chip units andthe plurality of first FRD chip units are alternately arranged on the first metal layer at intervals. In this way, the heat dissipation gaps can be increased when the chips work, the junction temperature of the chips is reduced