Insulated gate bipolar transistor equipment

• Main Authors: KHAN SHAMSUL AREFIN, LEE MENGIA, LIU MINGJIAO, GRIVNA GORDON M, WALL RALPH N
• Format: Patent
• Language: Chinese; English
• Published: 19.02.2019
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The utility model relates to an insulated gate bipolar transistor (IGBT) equipment. IGBT equipment can be including the source region, the passive region, and along vertical axis extend's in the active area slot. IGBT still can include first mesa and second mesa, first mesa is injectd the first side wall of slot and with the slot is parallel, the second mesa is injectd the second lateral wall of slot and with the slot is parallel. First mesa at least some can include the active area section of IGBT equipment, and the second mesa at least some can include the passive region section of IGBT equipment. 本实用新型涉及绝缘栅双极晶体管(IGBT)设备。所述IGBT设备可包括有源区，无源区，以及沿着所述有源区中的纵向轴线延伸的沟槽。所述IGBT还可包括第台面和第二台面，所述第台面限定所述沟槽的第侧壁并且与所述沟槽平行，所述第二台面限定所述沟槽的第二侧壁并且与所述沟槽平行。所述第台面的至少部分可包括所述IGBT设备的有源区段，并且所述第二台面的至少部分可包括所述IGBT设备的无源区段。