Monolithic semiconductor device and semiconductor device

• Main Authors: JEFFERSON W. HALL, GORDON M. GRIVNA
• Format: Patent
• Language: Chinese; English
• Published: 04.12.2018
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The utility model relates to monolithic semiconductor device and semiconductor device. The utility model discloses a technical problem who solves provides modified monolithic semiconductor device andmodified semiconductor device. This monolithic semiconductor device include: a substrate, the substrate is including partly extending to opening in the first surface of substrate, formation is in openintraoral perpendicular power transistor, wherein the second surface conduct of substrate perpendicular power transistor's drain terminal operation, and a interconnect structure, be couple to perpendicular power transistor the drain terminal is in order to be used for the sensing perpendicular power transistor's drain voltage. Through the utility model discloses, can obtain modified monolithic semiconductor device and modified semiconductor device. 本公开涉及单片半导体器件和半导体器件。本实用新型要解决的个技术问题是提供改进的单片半导体器件和改进的半导体器件。该单片半导体器件包括：衬底，所述衬底包括部分地延伸到所述衬底的第表面中的开口；形成在所述开口内的垂直功率晶体管，其中所述衬底的第二表面作为所述垂直功率晶体管的漏极端子操作；以及第互连结构，耦接到所述垂直功率晶体管的所述漏极端子以用于