Integrated circuit

The utility model relates to an integrated circuit. Integrated circuit is including the semiconductor substrate who has the semiconductor trap of electrical isolation. Upper portion trench isolation spare extends to the degree of depth apart from the bottom certain distance of trap from the front of...

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Bibliographic Details
Main Authors STEPHAN NIEL, BENOIT FROMENT, ARNAUD REGNIER, ABDERREZAK MARZAKI
Format Patent
LanguageChinese
English
Published 12.10.2018
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Summary:The utility model relates to an integrated circuit. Integrated circuit is including the semiconductor substrate who has the semiconductor trap of electrical isolation. Upper portion trench isolation spare extends to the degree of depth apart from the bottom certain distance of trap from the front of semiconductor trap. Two additional region and semiconductor trap electrical insulations of keepingapart to along the inside extension of first direction at the semiconductor trap, and follow the bottom that the front of semiconductor trap extended to the semiconductor trap perpendicularly. At least one is limitd by the bottom of two additional isolation regions, upper portion trench isolation spare and semiconductor trap through the resistance region that surrounds. Electric contacts is regional to the resistance through surrounding by the electric coupling. Through introducing additional isolation region, allow the area of the regional cross section of reduce resistance from this to consequently, allow to increas
Bibliography:Application Number: CN201721107994U