Integrated electron device

• Main Authors: MARCO MARCHESI, LUCANOS MARSILIO STRAMBINI, GIUSEPPE BARILLARO, FABRIZIO FAUSTO RENZO TOIA, MARCO SAMBI, RICCARDO DEPETRO, MARCO MORELLI
• Format: Patent
• Language: Chinese; English
• Published: 14.08.2018
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The utility model provides an integrated electron device, its has semiconductor body (30), includes: first electrode region territory (32), this first electrode region territory has a conductivity type, and the 2nd electrode area territory (28, 34, 38), the 2nd electrode area territory has the 2nd conductivity type, and the 2nd electrode area territory forms the knot with an electrode area territory. This integrated electron device further includes: nanostructured semiconductor regional (48), this nanostructured semiconductor region is in this first and second electrode area territory (32, extend one of 28, 34, 38). 种的集成电子器件，其具有半导体本体(30)，包括：第电极区域(32)，该第电极区域具有第导电类型；以及第二电极区域(28，34，38)，该第二电极区域具有第二导电类型，该第二电极区域与该第电极区域形成结。该集成电子器件进步包括：纳米结构半导体区域(48)，该纳米结构半导体区域在该第和第二电极区域(32；28，34，38)之中延伸。