Anti withstand voltage impact soft turning -off's IGBT device structure

• Main Authors: ZHU YUANZHENG, ZHANG SHUO
• Format: Patent
• Language: Chinese; English
• Published: 03.08.2018
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The utility model belongs to the technical field of semiconductor device's manufacturing, a anti withstand voltage impact soft turning -off IGBT device structure and manufacturing method is related to, on the cross -section of IGBT device, including a conductivity type drift region, the upper surface of a conductivity type drift region is first interarea, the lower surface is the second interarea,second interarea side is provided with the 2nd conductivity type collecting zone, a serial communication port, incline at the second interarea, be provided with a conductivity type electric field buffer layer between the 2nd a conductivity type collecting zone and a conductivity type drift region, on the direction of the directional second interarea of first interarea, to be the gradient crescentfor a conductivity type impurity ion's doping concentration distribution in the conductivity type electric field buffer layer, the utility model discloses an optimize back electric field buffer layerstructure for reduction el