Anti withstand voltage impact soft turning -off's IGBT device structure
The utility model belongs to the technical field of semiconductor device's manufacturing, a anti withstand voltage impact soft turning -off IGBT device structure and manufacturing method is related to, on the cross -section of IGBT device, including a conductivity type drift region, the upper s...
Saved in:
Main Authors | , |
---|---|
Format | Patent |
Language | Chinese English |
Published |
03.08.2018
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Abstract | The utility model belongs to the technical field of semiconductor device's manufacturing, a anti withstand voltage impact soft turning -off IGBT device structure and manufacturing method is related to, on the cross -section of IGBT device, including a conductivity type drift region, the upper surface of a conductivity type drift region is first interarea, the lower surface is the second interarea,second interarea side is provided with the 2nd conductivity type collecting zone, a serial communication port, incline at the second interarea, be provided with a conductivity type electric field buffer layer between the 2nd a conductivity type collecting zone and a conductivity type drift region, on the direction of the directional second interarea of first interarea, to be the gradient crescentfor a conductivity type impurity ion's doping concentration distribution in the conductivity type electric field buffer layer, the utility model discloses an optimize back electric field buffer layerstructure for reduction el |
---|---|
AbstractList | The utility model belongs to the technical field of semiconductor device's manufacturing, a anti withstand voltage impact soft turning -off IGBT device structure and manufacturing method is related to, on the cross -section of IGBT device, including a conductivity type drift region, the upper surface of a conductivity type drift region is first interarea, the lower surface is the second interarea,second interarea side is provided with the 2nd conductivity type collecting zone, a serial communication port, incline at the second interarea, be provided with a conductivity type electric field buffer layer between the 2nd a conductivity type collecting zone and a conductivity type drift region, on the direction of the directional second interarea of first interarea, to be the gradient crescentfor a conductivity type impurity ion's doping concentration distribution in the conductivity type electric field buffer layer, the utility model discloses an optimize back electric field buffer layerstructure for reduction el |
Author | ZHANG SHUO ZHU YUANZHENG |
Author_xml | – fullname: ZHU YUANZHENG – fullname: ZHANG SHUO |
BookMark | eNrjYmDJy89L5WRwd8wryVQozyzJKC5JzEtRKMvPKUlMT1XIzC1ITC5RKM5PK1EoKS3Ky8xLV9DNT0tTL1bwdHcKUUhJLctMTlUoLikqTQbKp_IwsKYl5hSn8kJpbgYlN9cQZw_d1IL8-NRioGGpeakl8c5-RgbmZpYG5paWoaHGRCkCAMZSNiA |
ContentType | Patent |
DBID | EVB |
DatabaseName | esp@cenet |
DatabaseTitleList | |
Database_xml | – sequence: 1 dbid: EVB name: esp@cenet url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP sourceTypes: Open Access Repository |
DeliveryMethod | fulltext_linktorsrc |
Discipline | Medicine Chemistry Sciences |
DocumentTitleAlternate | 种抗耐压冲击软关断的IGBT器件结构 |
ExternalDocumentID | CN207690799UU |
GroupedDBID | EVB |
ID | FETCH-epo_espacenet_CN207690799UU3 |
IEDL.DBID | EVB |
IngestDate | Fri Jul 19 16:37:25 EDT 2024 |
IsOpenAccess | true |
IsPeerReviewed | false |
IsScholarly | false |
Language | Chinese English |
LinkModel | DirectLink |
MergedId | FETCHMERGED-epo_espacenet_CN207690799UU3 |
Notes | Application Number: CN201721875361U |
OpenAccessLink | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20180803&DB=EPODOC&CC=CN&NR=207690799U |
ParticipantIDs | epo_espacenet_CN207690799UU |
PublicationCentury | 2000 |
PublicationDate | 20180803 |
PublicationDateYYYYMMDD | 2018-08-03 |
PublicationDate_xml | – month: 08 year: 2018 text: 20180803 day: 03 |
PublicationDecade | 2010 |
PublicationYear | 2018 |
RelatedCompanies | WUXI NCE POWER CO., LTD |
RelatedCompanies_xml | – name: WUXI NCE POWER CO., LTD |
Score | 3.2800002 |
Snippet | The utility model belongs to the technical field of semiconductor device's manufacturing, a anti withstand voltage impact soft turning -off IGBT device... |
SourceID | epo |
SourceType | Open Access Repository |
SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
Title | Anti withstand voltage impact soft turning -off's IGBT device structure |
URI | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20180803&DB=EPODOC&locale=&CC=CN&NR=207690799U |
hasFullText | 1 |
inHoldings | 1 |
isFullTextHit | |
isPrint | |
link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV1RS8MwED7mFPVNp6JOJYjUp6Iz7bo-DLFpuymsG9LK3sbSJjgfumErgr_eS9Y5n_YWEgiXkPsud7n7AnDTljTL8ByZNrfuTSuVmdnhztScpo7gNncpz1RAfxC1-4n1MrbHNfhY1cJontBvTY6IGpWivpcarxfrIJavcyuLOz7DrvljGHd9o_KOW4olkRq-1w1GQ3_IDMa6LDKiVxxzlB_ouskWbKtrtOLZD948VZWy-G9SwgPYGeFseXkItZ_3Buyx1c9rDdgdVA_e2Kx0rziC3lNezoiKm2r3nyCulAgGZFnnSArEU4L2Q8U5iDmX8rYgzz0vJplQYECWRLFfn-IYrsMgZn0TJZr8LX_CorXwCT2Bej7PxSkQKVsWp9RNXU7V-2RH2JZwuJDoYz2kLfcMmhsmOt842oR9tZs6041eQB1FFJdofUt-pbftF_k7img |
link.rule.ids | 230,309,786,891,25594,76903 |
linkProvider | European Patent Office |
linkToHtml | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV3NT8IwFH9BNOJNUaPiR2PMPC2K3Rg7ECMdAxQGMcNwI3RrIx424mZM_Ot9LSCeuDVt0rw2fb-X3_sqwE1N0jjGd2Ta3Lo3rUjGZp07U3MaOYLb3KU8Vg79flDrjKznsT0uwMeqFkb3Cf3WzRFRoyLU91zj9XztxPJ0bmV2x2c4lT76YcMzluy4qrokUsNrNlrDgTdgBmMNFhjBK645ige67mgLttVQU6W3pqpKmf83Kf4-7AxxtyQ_gMLPexlKbPXzWhl2-8uANw6XupcdQvspyWdE-U01_SeIKzmCAVnUOZIM8ZSg_VB-DmKmUt5mpNtuhiQWCgzIolHs16c4gmu_FbKOiRJN_o4_YcFa-BE9hmKSJuIEiJRVi1PqRi6nKj5ZF7YlHC4kcqyHqOqeQmXDRmcbV6-g1An7vUmvG7xUYE_drM56o-dQRHHFBVrinF_qK_wFlxiNUg |
openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=Anti+withstand+voltage+impact+soft+turning+-off%27s+IGBT+device+structure&rft.inventor=ZHU+YUANZHENG&rft.inventor=ZHANG+SHUO&rft.date=2018-08-03&rft.externalDBID=U&rft.externalDocID=CN207690799UU |