Anti withstand voltage impact soft turning -off's IGBT device structure

The utility model belongs to the technical field of semiconductor device's manufacturing, a anti withstand voltage impact soft turning -off IGBT device structure and manufacturing method is related to, on the cross -section of IGBT device, including a conductivity type drift region, the upper s...

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Bibliographic Details
Main Authors ZHU YUANZHENG, ZHANG SHUO
Format Patent
LanguageChinese
English
Published 03.08.2018
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The utility model belongs to the technical field of semiconductor device's manufacturing, a anti withstand voltage impact soft turning -off IGBT device structure and manufacturing method is related to, on the cross -section of IGBT device, including a conductivity type drift region, the upper surface of a conductivity type drift region is first interarea, the lower surface is the second interarea,second interarea side is provided with the 2nd conductivity type collecting zone, a serial communication port, incline at the second interarea, be provided with a conductivity type electric field buffer layer between the 2nd a conductivity type collecting zone and a conductivity type drift region, on the direction of the directional second interarea of first interarea, to be the gradient crescentfor a conductivity type impurity ion's doping concentration distribution in the conductivity type electric field buffer layer, the utility model discloses an optimize back electric field buffer layerstructure for reduction el
Bibliography:Application Number: CN201721875361U