Terminal structure of transistor device

• Main Authors: ZHU YUANZHENG, ZHANG SHUO
• Format: Patent
• Language: Chinese; English
• Published: 13.03.2018
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The utility model provides a terminal structure of transistor device, the cut -off ring structure includes two parts: inboard part and outside part, at the inside portion branch, it is isolated that apolycrystalline silicon field plate and a conductivity type light dope type drift region pass throug...