Terminal structure of transistor device

• Main Authors: ZHU YUANZHENG, ZHANG SHUO
• Format: Patent
• Language: Chinese; English
• Published: 13.03.2018
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The utility model provides a terminal structure of transistor device, the cut -off ring structure includes two parts: inboard part and outside part, at the inside portion branch, it is isolated that apolycrystalline silicon field plate and a conductivity type light dope type drift region pass through gate oxide, is equipped with the insulating medium layer on the polycrystalline silicon field plate, is equipped with the metal field plate on the insulating medium layer, metal field plate clearing hole structure is passed the insulating medium layer and is connected with polycrystalline siliconfield plate electricity, in outside part, it is isolated that a polycrystalline silicon field plate and a conductivity type light dope type drift region pass through gate oxide, and in the outside ofoutside part, metal field plate clearing hole structure is passed the insulating medium layer and is connected with a conductivity type light dope type drift region, bearing when withstand voltage when the device, can going ou