Resume power diode soon

• Main Authors: SHAO FENG, LI HONGJUN
• Format: Patent
• Language: Chinese; English
• Published: 25.08.2017
• Subjects: BASIC ELECTRIC ELEMENTS; CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION ORPROCESSING OF GOODS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; SEMICONDUCTOR DEVICES; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS; TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE

The utility model provides a resume power diode soon. This resume power diode soon includes: the silicon chip substrate, the epitaxial layer, the epitaxial layer is located silicon chip substrate upper surface to have PN junction and oxide layer, the slot, the slot is located the top of silicon chip substrate and the inside of epitaxial layer, and the degree of depth of slot exceedes the thickness of PN junction, the first metal layer, the first metal layer is located the position of not overlapping with the slot of epitaxial layer upper surface, and second metal level, the second metal level is located the first metal layer upper surface, wherein, the first metal layer with the difference of the window radius of second metal level is 100~200 mu m. 本实用新型提供种快恢复功率二极管。该快恢复功率二极管包括：硅片衬底；外延层，所述外延层位于所述硅片衬底上表面，并具有PN结和氧化层；沟槽，所述沟槽位于硅片衬底的上方、且外延层的内部，并且所述沟槽的深度超过所述PN结的厚度；第金属层，所述第金属层位于所述外延层上表面的不与沟槽重叠的位置；以及第二金属层，所述第二金属层位于所述第金属层上表面，其中，所述第金属层和所述第二金属层的窗口半径之差为100～200μm。