Selectivity polycrystalline silicon thin film's passivation contact structure

• Main Authors: CUI YANFENG, CHEN DAMING, YANG YANG, CHEN YIFENG
• Format: Patent
• Language: Chinese; English
• Published: 06.06.2017
• Subjects: BASIC ELECTRIC ELEMENTS; CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION ORPROCESSING OF GOODS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; SEMICONDUCTOR DEVICES; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS; TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE

The utility model discloses a selectivity polycrystalline silicon thin film's passivation contact structure has a layer thickness in crystalline silica surface preparation, 2 nm's silicon dioxide layer, at silicon dioxide layer surface preparation doping polycrystalline silicon thin film, doping polycrystalline silicon thin film has first thickness in no metal touch region, is having the metal touch region to have second thickness, and just first thickness is less than second thickness, at polycrystalline silicon thin film's second thickness region list shape of face one -tenth metal electrode. The utility model discloses make traditional screen printing technique combine effectively to be in the same place with passivation contact technique, be favorable to pushing passivation contact technique to volume production, simultaneously, improve solar battery's efficiency effectively. 本实用新型公开了种选择性多晶硅薄膜的钝化接触结构，在晶体硅表面制备有层厚度<2 nm 的二氧化硅层，在二氧化硅层表面制备掺杂多晶硅薄膜，所述掺杂多晶硅薄膜在无金属接触区域具有第厚度，在有金属接触区域具有第二厚度，且第厚度小于第二厚度，在多晶硅薄膜的第二厚度区域表