Markd terahertz in back area is schottky diode now

• Main Authors: ZHANG LISEN, FENG ZHIHONG, LIANG SHIXIONG, WANG DUNLONG, XING DONG, YANG DABAO, ZHAO XIANGYANG
• Format: Patent
• Language: Chinese; English
• Published: 16.11.2016
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The utility model discloses a markd terahertz in back area is schottky diode now relates to schottky diode technical field. The diode includes terahertz schottky diode body now, terahertz schottky diode body now includes semi -insulating gaAs substrate, the lower surface of semi -insulating gaAs substrate is equipped with the mark, is used for instructing negative pole and positive pole are distinguished to the positive electrode position of diode body. Through make the mark on the back of substrate, distinguish the positive pole and the negative pole of diode, avoid the loading error, improved the identifiability and the workability of diode face -down bonding. 本实用新型公开了种背面带有标记的太赫兹肖特基二极管，涉及肖特基二极管技术领域。所述二极管包括太赫兹肖特基二极管本体，所述太赫兹肖特基二极管本体包括半绝缘GaAs衬底，所述半绝缘GaAs衬底的下表面设有标记，用于指示所述二极管本体正面的电极位置，区分阴极和阳极。通过在衬底的背面上制作标记，区分二极管的阳极和阴极，避免装配错误，提高了二极管倒装焊接的可辨识性和可使用性。