Two p -n tie crystalline?silicon?solar cells

• Main Authors: Chen Gang, Huang Yuping, He Daneng, Shi Qiang, Fang Jiebin, Qin Chongde
• Format: Patent
• Language: Chinese; English
• Published: 31.08.2016
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGYGENERATION, TRANSMISSION OR DISTRIBUTION; SEMICONDUCTOR DEVICES; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS; TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE

The utility model discloses a two p -n tie crystalline?silicon?solar cells belongs to solar cell technical field, this battery by down supremely include the ag back electrode in proper order, firstly subtract anti - membrane, the second subtracts anti - membrane, ag positive electrode and sets up the metal wire electrode in the solar cell both sides, still subtract the two p -n knot structure between the anti - membrane including setting up at first anti - membrane and the second of subtracting, this couple p -n knot structure respectively forms a P -N and ties with positive at solar cell's the back. The utility model discloses a P -N knot is respectively prepared with the front in the back at solar cell for solar cell's the front and the back can both effectually utilize sun photon, thereby improve the electric current of battery greatly, thereby promote the conversion efficiency of battery. 本实用新型公开种双p-n结晶体硅太阳能电池，属于太阳能电池技术领域，该电池由下至上依次包括Ag背电极、第减反膜、第二减反膜、Ag正电极及设置在太阳能电池两侧的金属线电极；还包括设置在第减反膜与第二减反膜之间的双p-n结结构，该双p-n结