Si substrate LED epitaxial wafer

• Main Authors: Bai Xinjiao, Wang Jinghui, Zhou Xiaolong, Wang Bo, Fang Yulong, Yuan Fengpo, Wang Ling, Liu Bo, Pan Peng
• Format: Patent
• Language: Chinese; English
• Published: 10.08.2016
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The utility model discloses a si substrate LED epitaxial wafer relates to the device technical field who has special crystal structure. The epitaxial wafer includes si substrate and the epitaxial layer that is located si substrate upper surface, epitaxial layer from the bottom up is alNAlGaN buffer layer, involuntary doping U type gaN layer, si doping N type gaN layer, the multiple quantum well radiation layer of inGaNGaN, electron barrier layer and mg doping P type gaN layer in proper order. The epitaxial wafer has improved internal quantum efficiency, reduce the piezoelectricity polarized electric field simultaneously, increase the wave function overlap in electron and hole for the radiative recombination probability increases, has further improved internal quantum efficiency. 本实用新型公开了种Si衬底LED外延片，涉及具有特殊晶体结构的器件技术领域。所述外延片包括Si衬底和位于Si衬底上表面的外延层，所述外延层从下到上依次为AlN/AlGaN缓冲层、非故意掺杂U型GaN层、Si掺杂N型GaN层、InGaN/GaN多重量子阱发光层、电子阻挡层和Mg掺杂P型GaN层。所述外延片提高了内量子效率；同时减少压电极化电场，增加电子和空穴的波函数交叠，使得辐射复合概率增加，进步提高了内量子效率。