Semiconductor device

The utility model provides high semiconductor device's reliability. Probe regional (PBR) at the pad (PD) by protective insulation membrane (PIF) cover is formed with probe vestige (PM). And cylindrical electrode (PE) has: 1st part of formation on open area (OP2), go up the 2nd part of extending...

Full description

Saved in:
Bibliographic Details
Main Authors SHINJI BABA, NOBUHIRO KINOSHITA, KENTARO MORI, YOSHIHIRO ONO, TSUYOSHI KIDA, KENJI SAKATA, JUMPEI KONNO
Format Patent
LanguageEnglish
Published 24.02.2016
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:The utility model provides high semiconductor device's reliability. Probe regional (PBR) at the pad (PD) by protective insulation membrane (PIF) cover is formed with probe vestige (PM). And cylindrical electrode (PE) has: 1st part of formation on open area (OP2), go up the 2nd part of extending to probe regional (PBR) with follow open area (OP2). At this moment, open area's (OP2) center is skew for the cylindrical electrode's (PE) relative with joint finger -type portion center.
Bibliography:Application Number: CN201520449677U