Semiconductor device with perpendicular channel

• Main Authors: SAM ZIQUN ZHAO, FRANK HUI
• Format: Patent
• Language: English
• Published: 16.12.2015
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The utility model relates to a semiconductor device with perpendicular channel. A semiconductor device which characterized in that, semiconductor device includes: first doped layer pours into semiconductor substrate into and forms one of source electrode or drain electrode, the grid metal level, set up in on the first doped layer, the second doped layer, set up in form on the grid metal level the source electrode or another person in the drain electrode, wherein first doped layer the grid metal level reaches the second doped layer forms semiconductor device's the perpendicular stacked body in layer, and the conducting channel, in the slot, the perpendicular extension passes the slot the perpendicular stacked body in layer and terminate in semiconductor substrate department. The utility model discloses make following enable: gadget characteristic proportion more, short channel effect's better control, the base plate pours into the reduction of sensitivity into, produce the higher drive current of every silicon area of faster switching speed, and make the ability that device packaging density and grid length decoupled.