Device and board for testing thermal resistance of metal-oxide-semiconductor field-effect transistor (MOSFET)

• Main Authors: LI RUGUAN, ZENG CHANG, HE XIAOQI, LIAO XUEYANG, ZHOU BIN, YOU JINCHENG
• Format: Patent
• Language: English
• Published: 18.03.2015
• Subjects: MEASURING; MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES; PHYSICS; TESTING

The utility model provides a device and a board for testing thermal resistance of a metal-oxide-semiconductor field-effect transistor (MOSFET). The device comprises a voltage source, a first current source, a second current source, a diode and a voltage measuring device, wherein a positive electrode and a negative electrode of the voltage source are connected to a grid electrode and a source electrode of the tested MOSFET respectively; a positive electrode and a negative electrode of the first current source are connected to a drain electrode and the source electrode of the tested MOSFET respectively; a positive electrode of the second current source is connected to the drain electrode of the tested MOSFET through the diode, a negative electrode of the second current source is connected to the source electrode, and a negative electrode of the diode is connected to the drain electrode; and a positive electrode and a negative electrode of the voltage measuring device are connected to the source electrode and the drain electrode of the tested MOSFET respectively. According to the utility model, interferences imposed on test signals by leakage signals of the second current source can be shielded through additionally arranging the diode between the second current source and the tested MOSFET, so that two test devices are not required to be welded in a series connection mode, and the test efficiency is improved.