High gain semiconductor single polarization vibrator with convergence gap

The utility model discloses a high gain semiconductor single polarization vibrator with a convergence gap. Through excellent structural design, a semiconductor is creatively applied to a vibrator piece, and the semiconductor structure and a vibrator are combined. Through continuous experiments, a re...

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Bibliographic Details
Main Author HU KENA
Format Patent
LanguageChinese
English
Published 03.12.2014
Subjects
ANTENNAS, i.e. RADIO AERIALS
BASIC ELECTRIC ELEMENTS
ELECTRICITY
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Summary:The utility model discloses a high gain semiconductor single polarization vibrator with a convergence gap. Through excellent structural design, a semiconductor is creatively applied to a vibrator piece, and the semiconductor structure and a vibrator are combined. Through continuous experiments, a rectangular metal vibrator piece is designed and the periphery of the vibrator piece is provided with a semiconductor ring, through the structural design of the metal vibrator design, a radiation signal flow is improved in metal vibrator piece flow length and speed, through the simulation of a large number of computer software, the working frequency band reaches 3000MHz, the frequency requirement standard of 4G is fully satisfied, the relative bandwidth reaches 65.9%, and the high gain semiconductor single polarization vibrator has good gain, front-to-back ratio and cross polarization ratio characteristics.
Bibliography:Application Number: CN20142368159U