A cadmium telluride thin film solar cell having a graphene conducting film and a stannic oxide transition layer
The utility model discloses a cadmium telluride thin film solar cell having a graphene conducting film and a stannic oxide transition layer. The solar cell comprises, from top to bottom, a metal front electrode, the intrinsic graphene thin film, the transparent high-resistance intrinsic stannic oxid...
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Main Authors | , , , |
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Format | Patent |
Language | English |
Published |
15.10.2014
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Subjects | |
Online Access | Get full text |
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Summary: | The utility model discloses a cadmium telluride thin film solar cell having a graphene conducting film and a stannic oxide transition layer. The solar cell comprises, from top to bottom, a metal front electrode, the intrinsic graphene thin film, the transparent high-resistance intrinsic stannic oxide transition layer, an n-type cadmium sulfide thin film, a p-type cadmium telluride thin film, a heavy-doping p-type graphene substrate and a metal back electrode. The solar cell has the advantages that the transparent high-resistance intrinsic stannic oxide transition layer can effectively compensate for tiny electric leakage channels formed by needle-shaped micro-holes of the cadmium sulfide thin film under the condition that the cadmium sulfide thin film is relatively thin, increase light current and bypass resistance and effectively protect the p-n junction, so that the response to the short wave part of sunlight of the solar cell is increased to a certain extent; and the intrinsic graphene thin film has the advantages of high conductivity, high light transmittance and favorable illumination heat stability, so that the prepared solar cell has stable performance and the photoelectric efficiency is high. |
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Bibliography: | Application Number: CN20142248544U |