HIT solar cell

• Main Author: LU HAIJIANG
• Format: Patent
• Language: Chinese; English
• Published: 26.03.2014
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGYGENERATION, TRANSMISSION OR DISTRIBUTION; SEMICONDUCTOR DEVICES; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS; TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE

The utility model discloses an HIT solar cell. The solar cell comprises an N-type monocrystalline silicon wafer. The front side of the N-type monocrystalline silicon wafer is provided with a P-type non-uniformly doped nanocrystalline silicon (P-nc-Si:H) thin film. A front-side transparent conductive oxide (TCO) thin film is plated on the P-nc-Si:H thin film, and silver metal grid line positive electrodes are printed on the front-side TCO thin film. The back side of the N-type monocrystalline silicon wafer is provided with an N-type non-uniformly doped nanocrystalline silicon (N-nc-Si:H) thin film. A back-side TCO thin film is plated on the back-side N-nc-Si:H thin film, and silver metal grid line positive electrodes are printed on the back-side TCO thin film. The HIT solar cell provided by the utility model has the advantages of simplified technology, reduced cost, widened process window, and improved fill factors and stability.