Energy-saving type kyropoulos-method sapphire crystal growth furnace thermal field structure

• Main Authors: WANG LINGHUI, JIA BAOSHEN, ZHANG XIANGFENG, ZHAO JIE, JIANG ZUOLIN, GAO PEIBO
• Format: Patent
• Language: Chinese; English
• Published: 05.03.2014
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMISTRY; CRYSTAL GROWTH; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

The utility model relates to an energy-saving type kyropoulos-method sapphire crystal growth furnace thermal field structure. The energy-saving type kyropoulos-method sapphire crystal growth furnace thermal field structure comprises a stainless steel barrel and an internal thermal insulation barrel arranged inside the stainless steel barrel, wherein a birdcage type heating body is arranged in an inner cavity of the internal thermal insulation barrel; a lower heat insulating screen is arranged below the birdcage type heating body; a crucible is arranged in the inner cavity of the birdcage type heating body; the crucible is supported by a crucible supporting structure on the bottom; a crucible cover is arranged at the upper end of the crucible; an upper heat insulating screen is placed on the crucible cover; a zirconium oxide fiber board between the internal insulation barrel and the side wall as well as the bottom part of the stainless steel barrel is used as a thermal insulation layer. According to the utilit