A semiconductor device

The utility model provides a semiconductor device comprising a semiconductor substrate, a well region, a grid electrode bus, and a first field board. The well region is formed in the semiconductor substrate. The grid electrode bus is formed on the surface of the well region. The first field board is...

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Bibliographic Details
Main Authors CHU WEILI, TIAN XIAOLI, ZHAO JIA, ZHU YANGJUN, ZUO XIAOZHEN
Format Patent
LanguageChinese
English
Published 19.06.2013
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The utility model provides a semiconductor device comprising a semiconductor substrate, a well region, a grid electrode bus, and a first field board. The well region is formed in the semiconductor substrate. The grid electrode bus is formed on the surface of the well region. The first field board is formed on the surface of the semiconductor substrate and covers part of the well region. The first field board is electrically connected with the grid electrode bus. In the semiconductor device, the first field board is electrically connected with the grid electrode bus so that the electric potential of the first field board is equal to that of the grid electrode bus. As a result, when same inverse voltage is applied to the semiconductor device, the voltage difference between the first field board and the semiconductor substrate is increased. So a depletion region on the surface of the semiconductor is further expanded in order to enhance the inverse voltage withstanding capability of the semiconductor device.
Bibliography:Application Number: CN20122647148U