High-voltage semiconductor device and terminal thereof

• Main Authors: CHU WEILI, TIAN XIAOLI, ZHU YANGJUN, HU AIBIN
• Format: Patent
• Language: Chinese; English
• Published: 27.03.2013
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The utility model discloses a high-voltage semiconductor device and a terminal thereof. The high-voltage semiconductor device terminal includes a substrate and field limiting rings. The substrate comprises a body layer. The field limiting rings are positioned in a surface of the substrate. The field limiting ring is of a three-layer doped region structure, wherein a first doped region is positioned in a surface of the body layer, a second doped region of an opposite doping type with the first doped region surrounds the first doped region, a third doped region with a same doping type as the first doped region surrounds the second doped region, the doping concentration of the first doped region is larger than the doping concentration of the second doped region, and the doping concentration of the third doped region is between the doping concentration of the second doped region and the doping concentration of the body layer. The field limiting ring formed by three layer doped regions in the embodiment of the uti