Crucible for polysilicon ingot loading

• Main Authors: WEI LIWEI, WU WEI
• Format: Patent
• Language: Chinese; English
• Published: 28.11.2012
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMISTRY; CRYSTAL GROWTH; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

A crucible for polysilicon ingot loading falling into the field of solar photovoltaic production technology, particularly the field of polysilicon processing technology comprises a crucible body. An annular edge skin is fixed at inner side of the circumference of the upper port of the crucible body. The edge skin has the inner surface obliquely disposed. The distance from the lower end of said edge skin to the crucible body axis is greater than the distance from the upper end of said edge skin to the crucible body axis. The crucible can make the edge skin have certain inward angle, reduce height of materials after loading of more polycrystalline ingot materials without causing leakage of the silicon material to guard plate and bottom plate of the crucible in the vacuum pumping and melting process, prolong service life of guard plate and bottom plate of the crucible, and reduce the polycrystalline ingot production cost.