Power heterojunction bipolar transistor with high thermal stability

• Main Authors: JIN DONGYUE, XIE HONGYUN, CHEN LIANG, WANG RENQING, XIAO YING, HU NING, ZHANG WANRONG
• Format: Patent
• Language: Chinese; English
• Published: 16.06.2010
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The utility model discloses a transistor, in particular to a power heterojunction bipolar transistor with high thermal stability. The voltage drop of an emitter ballast resistor of the transistor effectively compensates the built-in voltage change caused by rising temperature of self-heating effect; the transistor adopts the irregular finger-spacing symmetrical structure in which the emitter finger spacing is linearly increased from two sides of a device to the central part, or a symmetrical structure in which the spacing between two adjacent fingers or more than two is equal while the emitter finger spacing is linearly increased from two sides to the central part, therefore, the purposes as follows are achieved: the ability of radiating heat to the outside by an emitter finger at the central area of the device is remarkably improved, the heat flow from the outer side to the center is effectively avoided, the heat coupling effect between fingers is weakened and the thermal stability of the power transistor is