Face-down bonding LED chip structure

The utility model provides a face-down bonding LED chip structure, which comprises a base plate and an ohmic contact layer, wherein the thickness of the ohmic contact layer is 5100+200A and 5100-200A. A reflector mirror is arranged on the ohmic contact layer. In the utility model, as the reflector m...

Full description

Saved in:
Bibliographic Details
Main Authors WANG GAOXU, WU DAKE, ZHANG KUN, ZHU GUOXIONG
Format Patent
LanguageChinese
English
Published 26.05.2010
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:The utility model provides a face-down bonding LED chip structure, which comprises a base plate and an ohmic contact layer, wherein the thickness of the ohmic contact layer is 5100+200A and 5100-200A. A reflector mirror is arranged on the ohmic contact layer. In the utility model, as the reflector mirror is arranged on the ohmic contact layer, the light is given out from the front surface, thereby improving the light efficiency of a chip; meanwhile, the thickness of the ohmic contact layer is increased into the required thickness, thereby being favorable for adding the action of current diffusion and improving the reliability of the chip.
Bibliography:Application Number: CN20092130650U