Strain compensating structure to reduce oxide-induced defects in semiconductor devices

A strain compensating structure (112) comprises a strain compensating layer (104) adjacent an oxide-forming layer (106). The strain compensating layer (104) compensates for the change in the lattice parameter due to oxidation of at least part of the oxide-forming layer (106).

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Bibliographic Details
Main Author TANDON ASHISH,LEARY MICHAEL HOWARD,TAN MICHAEL RENNE TY,CHANG YING-LAN
Format Patent
LanguageEnglish
Published 11.07.2007
Subjects
BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A strain compensating structure (112) comprises a strain compensating layer (104) adjacent an oxide-forming layer (106). The strain compensating layer (104) compensates for the change in the lattice parameter due to oxidation of at least part of the oxide-forming layer (106).
Bibliography:Application Number: CN200580001466