Strain compensating structure to reduce oxide-induced defects in semiconductor devices
A strain compensating structure (112) comprises a strain compensating layer (104) adjacent an oxide-forming layer (106). The strain compensating layer (104) compensates for the change in the lattice parameter due to oxidation of at least part of the oxide-forming layer (106).
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Main Author | |
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Format | Patent |
Language | English |
Published |
11.07.2007
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Subjects | |
Online Access | Get full text |
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Summary: | A strain compensating structure (112) comprises a strain compensating layer (104) adjacent an oxide-forming layer (106). The strain compensating layer (104) compensates for the change in the lattice parameter due to oxidation of at least part of the oxide-forming layer (106). |
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Bibliography: | Application Number: CN200580001466 |