Apparatus and methods for junction formation using optical illumination

Disclosed are methods and systems that include doping a semiconductor with at least one dopant, and exposing the semiconductor to an optical source(s), where the exposing occurs before, during, and/or after an annealing stage of said semiconductor. The annealing stage can include an annealing phase...

Full description

Saved in:
Bibliographic Details
Main Author DOWNEY DANIEL F.,AREVALO EDWIN A.,LIEBERT REUEL B
Format Patent
LanguageEnglish
Published 11.07.2007
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:Disclosed are methods and systems that include doping a semiconductor with at least one dopant, and exposing the semiconductor to an optical source(s), where the exposing occurs before, during, and/or after an annealing stage of said semiconductor. The annealing stage can include an annealing phase and/or an activation phase, which can occur substantially simultaneously. The systems can include at least one doping device for providing at least one dopant to a semiconductor, at least one annealing device to perform an annealing stage, and at least one optical source, where the semiconductor is exposed to light from the optical source(s) before, during, and/or after the annealing stage.
Bibliography:Application Number: CN2005820343