High-voltage P-type metal oxide transistor and producing method thereof

A method for preparing high voltage P type of metal oxide semiconductor tube includes setting P type of drift region with P type of drain and N type of trap with N type of contact hole and P type of source on P type of substrate, arranging grate oxidation layer on said trap and drift region, setting...

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Bibliographic Details
Main Author WEIFENG,YI SUN
Format Patent
LanguageEnglish
Published 06.06.2007
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method for preparing high voltage P type of metal oxide semiconductor tube includes setting P type of drift region with P type of drain and N type of trap with N type of contact hole and P type of source on P type of substrate, arranging grate oxidation layer on said trap and drift region, setting poly-silicon grate above oxidation layer, setting field oxidation layer above grate oxidation layer and said grate, arranging poly-silicon field polar plate in field oxidation layer, forming P type of drift region by four regions and setting doping concentration of four region to be one greater than another.
Bibliography:Application Number: CN2006141322