Semiconductor device and method of forming the same

A method of forming a semiconductor device that embeds an L-shaped spacer and a semiconductor device are provided. The method includes defining an L-shaped spacer on each side of a gate region of a substrate and embedding the L-shaped spacers in an oxide layer so that the oxide layer extends over a...

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Bibliographic Details
Main Author LUO ZHIJIONG,TEH YOUNG W.,AJMERA ATUL C
Format Patent
LanguageEnglish
Published 06.06.2007
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method of forming a semiconductor device that embeds an L-shaped spacer and a semiconductor device are provided. The method includes defining an L-shaped spacer on each side of a gate region of a substrate and embedding the L-shaped spacers in an oxide layer so that the oxide layer extends over a portion of the substrate a predetermined distance from a lateral edge of the L-shaped spacer. And removing oxide layers to expose the L-shape spacers.
Bibliography:Application Number: CN200610160396